A Photodetector is form of a light-weight sensor that converts light energy into electrical voltage or current. Photodiode is a type of semiconductor device with a PN junction. Between the positive (p) and negative (n) doped layers, a depletion layer is formed. Incident light causes the device to generate electric current as result of this excitation.These devices are also called photo sensors or light detectors. Photo diodes operate in reverse bias condition i.e. the p-side is biased with a lower potential than the n-side. Photodiodes are typically made with Silicon, Germanium, Indium, Gallium Arsenide Phosphide and Indium Gallium Arsenide.
Part Number | Product | Peak Wavelength | Dark Current | Vr - Reverse Voltage | Rise Time | Fall Time | Min. Op. Temp. | Max. Op. Temp. | Order |
---|---|---|---|---|---|---|---|---|---|
CS2020-P-1 | PIN | 940 nm | 7 nA | 32 V | 45 ns | 45 ns | - 40˚C | + 80˚C | Order |
CS2020-P-2 | PIN | 940 nm | 12 nA | 32 V | 10 ns | 45 ns | - 40˚C | + 80˚C | Order |
CS2020-P-3 | PIN | 980 nm | 12 nA | 32 V | 6 ns | 6 ns | - 40˚C | + 80˚C | Order |
CS2020-P-3 | PIN | 980 nm | 12 nA | 32 V | 6 ns | 6 ns | - 25˚C | + 80˚C | Order |
CS2020-P-4 | PIN | 850 nm | 85 nA | 20 V | 4000 ns | 6 ns | - 20˚C | + 55˚C | Order |
CS2020-P-5 | PIN | 850 nm | 820 nA | 85 V | 4000 ns | 6 ns | - 20˚C | + 55˚C | Order |
CS2020-P-6 | PIN | 850 nm | 0.2 nA | 32 V | 0.4 ns | 6 ns | - 35˚C | + 85˚C | Order |
CS2020-P-7 | PIN | 1550 nm | 1 nA | 25 V | 15 ns | 6 ns | - 20˚C | + 80˚C | Order |
CS2020-P-8 | PIN | 850 nm | 0.5 nA | 45 V | 55 ns | 6 ns | - 20˚C | + 60˚C | Order |
CS2020-P-9 | PIN | 900 nm | 0.5 nA | 55 V | 2000 ns | 6 ns | - 40˚C | + 90˚C | Order |
CS2020-P-10 | PIN | 850 nm | 80 nA | 20 V | 4000 ns | 6 ns | - 20˚C | + 85˚C | Order |
Part Number | Product | Package/Case | Peak Wavelength | Dark Current | Vr - Reverse Voltage | Rise Time | Min. Op. Temp. | Max. Op. Temp. | Order |
---|---|---|---|---|---|---|---|---|---|
CS2020-APD-1 | APD | TO-52-3 | 905 nm | 0.6 nA | 500 ps | 0˚C | + 60˚C | Order | |
CS2020-APD-2 | APD | TO-52-3 | 905 nm | 0.6 nA | 0.3 ns | 0˚C | + 60˚C | Order | |
CS2020-APD-3 | APD | TO-52-S1 | 800 nm | 0.6 nA | 85 V | 360 ps | -40˚C | + 100˚C | Order |
CS2020-APD-4 | APD | TO-52-S1 | 905 nm | 3 nA | 200 V | 1 ns | -40˚C | + 100˚C | Order |
CS2020-APD-5 | APD | TO-52 | 905 nm | 3 nA | 190 V | 1 ns | -40˚C | + 100˚C | Order |
CS2020-APD-6 | APD | TO-5 | 800 nm | 0.4 nA | 200 V | 350 ps | 0˚C | + 60˚C | Order |
CS2020-APD-7 | APD | TO-5 | 905 nm | 0.6 nA | 230 V | 500 ps | 0˚C | + 60˚C | Order |
CS2020-APD-8 | APD | TO-52-S1 | 905 nm | 0.7 nA | 180 V | 450 ps | - 40˚C | + 100˚C | Order |
CS2020-APD-9 | APD | TO-52-S1 | 905 nm | 0.55 ns | 170 V | 450 ps | - 40˚C | + 100˚C | Order |
CS2020-APD-10 | APD | TO-5i | 905 nm | 1 nA | 150 V | 1.5 ns | - 40˚C | + 100˚C | Order |
CS2020-APD-11 | APD | TO-52-S1 | 800 nm | 3 nA | 85 V | 1 ns | - 40˚C | + 100˚C | Order |
CS2020-APD-12 | APD | TO-52-S1 | 410 nm | 2 nA | 95 V | 0.3 ns | - 40˚C | + 85˚C | Order |
CS2020-APD-13 | APD | TO-5 | 905 nm | 0.7 nA | 160 V | 0.6 ns | 0˚C | + 60˚C | Order |
CS2020-APD-13 | APD | TO-5 | 905 nm | 0.4 nA | 160 V | 500 ps | 0˚C | + 60˚C | Order |
Part Number | Product | Wave Lenght | Responsivity | Response Time | DC Reverse (Vr) (Max) | Current - Dark | Active Area | Op. Temp. | Order |
---|---|---|---|---|---|---|---|---|---|
CS2020-U-1 | Schottky | 220nm ~ 280nm | 0.09 A/W @ 254nm | 1ns | 5V | 1pA | 0.08mm² | -35˚C ~ 80˚C | Order |
CS2020-U-2 | Schottky | 220nm ~ 370nm | 0.2 A/W @ 350nm | 1ns | 5V | 1pA | 0.08mm² | -35˚C ~ 85˚C | Order |
CS2020-U-2 | Schottky | 240nm ~ 320nm | 0.15 A/W @ 300nm | 1ns | 5V | 1pA | 0.08mm² | -40˚C ~ 80˚C | Order |